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IPI120N06S4H1AKSA2

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPI120N06S4H1AKSA2
Description: MOSFET N-CH TO262-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel
Packaging Tube
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Obsolete
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Vgs(th) (Max) @ Id 4V @ 200µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Power Dissipation (Max) 250W (Tc)
Supplier Device Package PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 21900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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