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IPW65R190E6FKSA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPW65R190E6FKSA1
Description: MOSFET N-CH 650V 20.2A TO247
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series CoolMOS™
FET Type N-Channel
Packaging Tube
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Obsolete
Mounting Type Through Hole
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.5V @ 730µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Power Dissipation (Max) 151W (Tc)
Supplier Device Package PG-TO247-3
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Drain to Source Voltage (Vdss) 650V
Input Capacitance (Ciss) (Max) @ Vds 1620pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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