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EPC2107ENGRT

Manufacturers:	EPC
Product Category:	Transistors - FETs, MOSFETs - Arrays
Data Sheet:	EPC2107ENGRT
Description:	GAN TRANS 3N-CH 100V BUMPED DIE
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	EPC
Product Category	Transistors - FETs, MOSFETs - Arrays
Series	eGaN®
FET Type	3 N-Channel (Half Bridge + Synchronous Bootstrap)
Packaging	Digi-Reel®
FET Feature	GaNFET (Gallium Nitride)
Part Status	Discontinued at Digi-Key
Power - Max	-
Mounting Type	Surface Mount
Package / Case	9-VFBGA
Vgs(th) (Max) @ Id	2.5V @ 100µA, 2.5V @ 20µA
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Supplier Device Package	9-BGA (1.35x1.35)
Gate Charge (Qg) (Max) @ Vgs	0.16nC @ 5V, 0.044nC @ 5V
Drain to Source Voltage (Vdss)	100V
Input Capacitance (Ciss) (Max) @ Vds	16pF @ 50V, 7pF @ 50V
Current - Continuous Drain (Id) @ 25°C	1.7A, 500mA

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