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EPC8009

Manufacturers: EPC
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: EPC8009
Description: GANFET TRANS 65V 2.7A BUMPED DIE
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer EPC
Product Category Transistors - FETs, MOSFETs - Single
Series eGaN®
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) +6V, -4V
Technology GaNFET (Gallium Nitride)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case Die
Vgs(th) (Max) @ Id 2.5V @ 250µA
Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V
Power Dissipation (Max) -
Supplier Device Package Die
Gate Charge (Qg) (Max) @ Vgs 0.45nC @ 5V
Drain to Source Voltage (Vdss) 65V
Input Capacitance (Ciss) (Max) @ Vds 52pF @ 32.5V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
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