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IPB100N06S2L05ATMA2

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPB100N06S2L05ATMA2
Description: MOSFET N-CH 55V 100A TO263-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drain to Source Voltage (Vdss) 55V
Input Capacitance (Ciss) (Max) @ Vds 5660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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