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IPD082N10N3GBTMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPD082N10N3GBTMA1
Description: MOSFET N-CH 100V 80A TO252-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series OptiMOS™
FET Type N-Channel
Packaging Tape & Reel (TR)
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Obsolete
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 3.5V @ 75µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 73A, 10V
Power Dissipation (Max) 125W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
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