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IPD80R3K3P7ATMA1

Manufacturers: Infineon Technologies
Product Category: Transistors - FETs, MOSFETs - Single
Data Sheet: IPD80R3K3P7ATMA1
Description: MOSFET N-CH 800V 1.9A TO252-3
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Infineon Technologies
Product Category Transistors - FETs, MOSFETs - Single
Series CoolMOS™ P7
FET Type N-Channel
Packaging Digi-Reel®
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Part Status Active
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 3.5V @ 30µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V
Power Dissipation (Max) 18W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Drain to Source Voltage (Vdss) 800V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
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