IPD85P04P407ATMA1
Manufacturers: | Infineon Technologies |
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Product Category: | Transistors - FETs, MOSFETs - Single |
Data Sheet: | IPD85P04P407ATMA1 |
Description: | MOSFET N-CH TO252-3 |
RoHS status: | RoHS Compliant |
Attribute | Attribute Value |
---|---|
Manufacturer | Infineon Technologies |
Product Category | Transistors - FETs, MOSFETs - Single |
Series | Automotive, AEC-Q101, OptiMOS™ |
FET Type | P-Channel |
Packaging | Tape & Reel (TR) |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Part Status | Active |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 85A, 10V |
Power Dissipation (Max) | 88W (Tc) |
Supplier Device Package | PG-TO252-3-313 |
Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Input Capacitance (Ciss) (Max) @ Vds | 6085pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
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In Stock 95 pcs
Refrence Price ($) | 1 pcs | 100 pcs | 500 pcs |
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$0.64 | $0.63 | $0.61 |
Minimum: 1