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BFG10W/X,115

Manufacturers: NXP USA Inc.
Product Category: Transistors - Bipolar (BJT) - RF
Data Sheet: BFG10W/X,115
Description: RF TRANS NPN 10V 1.9GHZ 4SO
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer NXP USA Inc.
Product Category Transistors - Bipolar (BJT) - RF
Gain -
Series -
Packaging Tape & Reel (TR)
Part Status Obsolete
Power - Max 400mW
Mounting Type Surface Mount
Package / Case SOT-343 Reverse Pinning
Transistor Type NPN
Base Part Number BFG10
Operating Temperature 175°C (TJ)
Frequency - Transition 1.9GHz
Supplier Device Package 4-SO
Noise Figure (dB Typ @ f) -
Current - Collector (Ic) (Max) 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max) 10V
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