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2SC3324GRTE85LF

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SC3324GRTE85LF
Description: TRANS NPN 120V 0.1A S-MINI
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 150mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Type NPN
Operating Temperature 125°C (TJ)
Frequency - Transition 100MHz
Supplier Device Package TO-236
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector (Ic) (Max) 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max) 120V
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