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2SD1221-Y(Q)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Single
Data Sheet: 2SD1221-Y(Q)
Description: TRANS NPN 60V 3A PW MOLD
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Single
Series -
Packaging Bulk
Part Status Obsolete
Power - Max 1W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type NPN
Operating Temperature 150°C (TJ)
Frequency - Transition 3MHz
Supplier Device Package PW-MOLD
Vce Saturation (Max) @ Ib, Ic 1V @ 300mA, 3A
Current - Collector (Ic) (Max) 3A
Current - Collector Cutoff (Max) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 5V
Voltage - Collector Emitter Breakdown (Max) 60V
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