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HN4B01JE(TE85L,F)

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HN4B01JE(TE85L,F)
Description: TRANS NPN/PNP 50V 0.15A ESV PLN
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Active
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Transistor Type NPN, PNP (Emitter Coupled)
Operating Temperature 150°C (TJ)
Frequency - Transition 80MHz
Supplier Device Package ESV
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector (Ic) (Max) 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10MA, 100MA
Voltage - Collector Emitter Breakdown (Max) 50V
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