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RN1910,LF(CT

Manufacturers:	Toshiba Semiconductor and Storage
Product Category:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Data Sheet:	RN1910,LF(CT
Description:	TRANS 2NPN PREBIAS 0.1W US6
RoHS status:	RoHS Compliant

Product Description
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Attribute	Attribute Value
Manufacturer	Toshiba Semiconductor and Storage
Product Category	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Series	-
Packaging	Digi-Reel®
Part Status	Active
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Type	2 NPN - Pre-Biased (Dual)
Resistor - Base (R1)	4.7kOhms
Frequency - Transition	250MHz
Supplier Device Package	US6
Resistor - Emitter Base (R2)	-
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector (Ic) (Max)	100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max)	50V

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