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SI2365EDS-T1-GE3

Manufacturers:	Vishay / Siliconix
Product Category:	Transistors - FETs, MOSFETs - Single
Data Sheet:	SI2365EDS-T1-GE3
Description:	MOSFET P-CH 20V 5.9A TO-236
RoHS status:	RoHS Compliant

Product Description
Customer Reviews

Attribute	Attribute Value
Manufacturer	Vishay / Siliconix
Product Category	Transistors - FETs, MOSFETs - Single
Series	TrenchFET®
FET Type	P-Channel
Packaging	Tape & Reel (TR)
Vgs (Max)	±8V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Part Status	Active
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id	1V @ 250µA
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Supplier Device Package	TO-236
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V

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