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HN1B04FU-Y(T5L,F,T

Manufacturers: Toshiba Semiconductor and Storage
Product Category: Transistors - Bipolar (BJT) - Arrays
Data Sheet: HN1B04FU-Y(T5L,F,T
Description: TRANS NPN/PNP 50V 0.15A US6
RoHS status: RoHS Compliant
Attribute Attribute Value
Manufacturer Toshiba Semiconductor and Storage
Product Category Transistors - Bipolar (BJT) - Arrays
Series -
Packaging Digi-Reel®
Part Status Discontinued at Digi-Key
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Type NPN, PNP
Operating Temperature 125°C (TJ)
Frequency - Transition 150MHz
Supplier Device Package US6
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector (Ic) (Max) 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Voltage - Collector Emitter Breakdown (Max) 50V
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